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WLCSP4
Discrete Semiconductor Products

PMCM4401VPEZ

Obsolete
Nexperia USA Inc.

12 V, P-CHANNEL TRENCH MOSFET

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WLCSP4
Discrete Semiconductor Products

PMCM4401VPEZ

Obsolete
Nexperia USA Inc.

12 V, P-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMCM4401VPEZ
Current - Continuous Drain (Id) @ 25°C3.9 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]415 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case4-XFBGA, WLCSP
Power Dissipation (Max)12.5 W
Power Dissipation (Max)400 mW
Rds On (Max) @ Id, Vgs65 mOhm
Supplier Device Package4-WLCSP
Supplier Device Package [x]0.78
Supplier Device Package [y]0.78
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.58
10$ 0.36
100$ 0.23
500$ 0.17
1000$ 0.15
2000$ 0.14
Digi-Reel® 1$ 0.58
10$ 0.36
100$ 0.23
500$ 0.17
1000$ 0.15
2000$ 0.14
N/A 537$ 0.72
Tape & Reel (TR) 9000$ 0.10
27000$ 0.10
63000$ 0.09

Description

General part information

PMCM4401 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.