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12 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
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12 V, P-channel Trench MOSFET
12 V, P-channel Trench MOSFET
| Part | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Vgs(th) (Max) @ Id | Vgs (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Supplier Device Package [y] | Supplier Device Package [x] | Power Dissipation (Max) [Max] | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 4-XFBGA WLCSP | MOSFET (Metal Oxide) | 415 pF | 12.5 W | 400 mW | 65 mOhm | 3.9 A | 10 nC | Surface Mount | 900 mV | 8 V | 1.8 V | 4.5 V | 150 °C | -55 °C | P-Channel | 12 V | 4-WLCSP | 0.78 | 0.78 | |||
 Nexperia USA Inc. | 4-XFBGA WLCSP | MOSFET (Metal Oxide) | 5.4 A | 6.2 nC | Surface Mount | 8 V | 2.5 V | 4.5 V | N-Channel | 20 V | 4-WLCSP | 0.78 | 0.78 | 400 mW | 150 °C | ||||||||
Nexperia USA Inc. | 4-XFBGA WLCSP | MOSFET (Metal Oxide) | 12.5 W | 400 mW | 95 mOhm | 4 A | 10 nC | Surface Mount | 900 mV | 8 V | 1.8 V | 4.5 V | 150 °C | -55 °C | P-Channel | 20 V | 4-WLCSP | 0.78 | 0.78 | 420 pF |