Specification	FODM8801BV

Current - DC Forward (If) (Max) [Max]	20 mA
Current - Output / Channel	30 mA
Current Transfer Ratio (Max)	260 %
Current Transfer Ratio (Min) [Min]	130 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Output Type	1.81 mOhm
Package / Case	4-SOIC
Package / Case [x]	0.173 in
Package / Case [y]	4.4 mm
Rise / Fall Time (Typ) [custom]	5.5 µs
Rise / Fall Time (Typ) [custom]	5 µs
Supplier Device Package	4-Mini-Flat
Turn On / Turn Off Time (Typ) [custom]	6 µs
Turn On / Turn Off Time (Typ) [custom]	6 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.35 V
Voltage - Isolation	3750 Vrms
Voltage - Output (Max) [Max]	75 V

FODM8801B Series

OptoHiT™ Series, High-Temperature Phototransistor

Part	Current Transfer Ratio (Max)	Voltage - Output (Max) [Max]	Vce Saturation (Max) [Max]	Mounting Type	Turn On / Turn Off Time (Typ) [custom]	Turn On / Turn Off Time (Typ) [custom]	Output Type	Current - DC Forward (If) (Max) [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Isolation	Voltage - Forward (Vf) (Typ)	Input Type	Current Transfer Ratio (Min) [Min]	Current - Output / Channel	Supplier Device Package	Package / Case [y]	Package / Case	Package / Case [x]	Number of Channels	Operating Temperature [Max]	Operating Temperature [Min]	Current Transfer Ratio (Max) [Max]
ON Semiconductor FODM8801CR2	400 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	200 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801BR2	260 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	130 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801B	260 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	130 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801CR2V	400 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	200 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801BV	260 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	130 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801AR2		75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	80 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C	160 %
ON Semiconductor FODM8801BR2V	260 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	130 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.67
		10	$ 1.05
		150	$ 0.78
		600	$ 0.72
		1050	$ 0.59
		2100	$ 0.56
		5100	$ 0.55
		10050	$ 0.54
Newark	Each	2500	$ 0.56
		10000	$ 0.54
ON Semiconductor	N/A	1	$ 0.48

Description

General part information

FODM8801B Series

The OptoHiT™ FODM8801 is a first-of-its-kind phototransistor, utilizing ON Semiconductor’s leading-edge, proprietary process technology to achieve high operating temperature characteristics, up to 125°C. The optocoupler consists of an aluminum gallium arsenide (AlGaAs) infrared light emitting diode (LED) optically coupled to a phototransistor, in a compact half pitch, mini-flat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, VISO, is rated at 3750 VACRMS.

Documents

Technical documentation and resources

FODM8801BV

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FODM8801BV

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Technical Specifications

FODM8801B Series

Pricing

Description

FODM8801B Series

Documents

Product Change Notice EN

Technical Data Sheet EN

Package Drawing-100AL-MFP4 2.5X4.4, 1.27P

Datasheet

FODM8801B Series