Specification	FODM8801CR2V

Current - DC Forward (If) (Max) [Max]	20 mA
Current - Output / Channel	30 mA
Current Transfer Ratio (Max)	400 %
Current Transfer Ratio (Min) [Min]	200 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Output Type	1.81 mOhm
Package / Case	4-SOIC
Package / Case [x]	0.173 in
Package / Case [y]	4.4 mm
Rise / Fall Time (Typ) [custom]	5.5 µs
Rise / Fall Time (Typ) [custom]	5 µs
Supplier Device Package	4-Mini-Flat
Turn On / Turn Off Time (Typ) [custom]	6 µs
Turn On / Turn Off Time (Typ) [custom]	6 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.35 V
Voltage - Isolation	3750 Vrms
Voltage - Output (Max) [Max]	75 V

FODM8801B Series

OptoHiT™ Series, High-Temperature Phototransistor

Part	Current Transfer Ratio (Max)	Voltage - Output (Max) [Max]	Vce Saturation (Max) [Max]	Mounting Type	Turn On / Turn Off Time (Typ) [custom]	Turn On / Turn Off Time (Typ) [custom]	Output Type	Current - DC Forward (If) (Max) [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Isolation	Voltage - Forward (Vf) (Typ)	Input Type	Current Transfer Ratio (Min) [Min]	Current - Output / Channel	Supplier Device Package	Package / Case [y]	Package / Case	Package / Case [x]	Number of Channels	Operating Temperature [Max]	Operating Temperature [Min]	Current Transfer Ratio (Max) [Max]
ON Semiconductor FODM8801CR2	400 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	200 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801BR2	260 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	130 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801B	260 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	130 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801CR2V	400 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	200 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801BV	260 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	130 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801AR2		75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	80 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C	160 %
ON Semiconductor FODM8801BR2V	260 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	130 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.03
		10	$ 1.35
		100	$ 1.04
		500	$ 0.94
		1000	$ 0.81
	Digi-Reel®	1	$ 2.03
		10	$ 1.35
		100	$ 1.04
		500	$ 0.94
		1000	$ 0.81
	Tape & Reel (TR)	2500	$ 0.76
		5000	$ 0.75
		12500	$ 0.73
Newark	Each (Supplied on Cut Tape)	1	$ 2.10
		10	$ 1.39
		25	$ 1.29
		50	$ 1.18
		100	$ 1.07
		250	$ 1.04
		500	$ 0.92
ON Semiconductor	N/A	1	$ 0.67

Description

General part information

FODM8801B Series

The OptoHiT™ FODM8801 is a first-of-its-kind phototransistor, utilizing ON Semiconductor’s leading-edge, proprietary process technology to achieve high operating temperature characteristics, up to 125°C. The optocoupler consists of an aluminum gallium arsenide (AlGaAs) infrared light emitting diode (LED) optically coupled to a phototransistor, in a compact half pitch, mini-flat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, VISO, is rated at 3750 VACRMS.

Documents

Technical documentation and resources

Package Drawing-100AL-MFP4 2.5X4.4, 1.27P

Package Drawing

Datasheet

Technical Data Sheet EN

Datasheet

Product Change Notice EN

Datasheet