FODM8801B Series

OptoHiT™ Series, High-Temperature Phototransistor

Catalog

OptoHiT™ Series, High-Temperature Phototransistor

Part	Current Transfer Ratio (Max)	Voltage - Output (Max) [Max]	Vce Saturation (Max) [Max]	Mounting Type	Turn On / Turn Off Time (Typ) [custom]	Turn On / Turn Off Time (Typ) [custom]	Output Type	Current - DC Forward (If) (Max) [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Isolation	Voltage - Forward (Vf) (Typ)	Input Type	Current Transfer Ratio (Min) [Min]	Current - Output / Channel	Supplier Device Package	Package / Case [y]	Package / Case	Package / Case [x]	Number of Channels	Operating Temperature [Max]	Operating Temperature [Min]	Current Transfer Ratio (Max) [Max]
ON Semiconductor FODM8801CR2	400 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	200 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801BR2	260 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	130 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801B	260 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	130 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801CR2V	400 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	200 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801BV	260 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	130 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C
ON Semiconductor FODM8801AR2		75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	80 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C	160 %
ON Semiconductor FODM8801BR2V	260 %	75 V	400 mV	Surface Mount	6 µs	6 µs	1.81 mOhm	20 mA	5.5 µs	5 µs	3750 Vrms	1.35 V	DC	130 %	30 mA	4-Mini-Flat	4.4 mm	4-SOIC	0.173 in	1	125 °C	-40 °C

Catalog

OptoHiT™ Series, High-Temperature Phototransistor

Key Features

• Utilizing proprietary process technology to achieve high operating temperature up to 125°C

• Guaranteed Current Transfer Ratio (CTR) specifications across full temperature range

• Excellent CTR linearity at high temperature

• CTR at very low input current, IF

• High isolation voltage regulated by safety agency, UL1577, 3750 VAC RMS for 1 min. and DIN EN/IEC60747-5-2 (pending approval)

• Compact half pitch, mini-flat, 4-pin package (1.27mm lead pitch, 2.4mm maximum standoff height)

• > 5mm creepage and clearance distance

• Applicable to Infrared Ray reflow, 245°C

Description

The OptoHiT™ FODM8801 is a first-of-its-kind phototransistor, utilizing ON Semiconductor’s leading-edge, proprietary process technology to achieve high operating temperature characteristics, up to 125°C. The optocoupler consists of an aluminum gallium arsenide (AlGaAs) infrared light emitting diode (LED) optically coupled to a phototransistor, in a compact half pitch, mini-flat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, VISO, is rated at 3750 VACRMS.