
Discrete Semiconductor Products
ST1510FX
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 750 V, 12 A, 62 W, ISOWATT-218FX, THROUGH HOLE
Deep-Dive with AI
Search across all available documentation for this part.

Discrete Semiconductor Products
ST1510FX
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 750 V, 12 A, 62 W, ISOWATT-218FX, THROUGH HOLE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ST1510FX |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 12 A |
| Current - Collector Cutoff (Max) [Max] | 200 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 6.5 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | ISOWATT218FX |
| Power - Max [Max] | 62 W |
| Supplier Device Package | ISOWATT-218FX |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 750 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
ST1510FX Series
The device is manufactured using new Diffused Collector in Planar technology adopting new and enhanced high voltage structure 1 (E.H.V.S.1).
Documents
Technical documentation and resources