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High voltage fast-switching NPN Power transistor
Description
AI
The device is manufactured using new Diffused Collector in Planar technology adopting new and enhanced high voltage structure 1 (E.H.V.S.1).
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High voltage fast-switching NPN Power transistor
High voltage fast-switching NPN Power transistor
| Part | Mounting Type | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Operating Temperature | Transistor Type | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | Through Hole | ISOWATT218FX | 6.5 | ISOWATT-218FX | 2 V | 750 V | 12 A | 150 °C | NPN | 200 µA | 62 W |