Specification	MSCDC200H120AG

Current - Average Rectified (Io)	200 A
Current - Reverse Leakage @ Vr	800 µA
Diode Type	Single Phase
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Supplier Device Package	SP6
Technology	Silicon Carbide Schottky
Voltage - Forward (Vf) (Max) @ If	1.8 V
Voltage - Peak Reverse (Max) [Max]	1.2 kV

MSCDC200KK170D1PAG-Module Series

1700V, 200A, D1P Dual Common Cathode mSiC™ Diode Module

Part	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Voltage - Peak Reverse (Max) [Max]	Diode Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Package / Case	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Speed	Reverse Recovery Time (trr)
Microchip Technology MSCDC200H120AG	800 µA	Silicon Carbide Schottky	SP6	1.2 kV	Single Phase	-40 C	175 °C	Chassis Mount	1.8 V	200 A	Module
Microchip Technology MSCDC200H170AG	800 µA	Silicon Carbide Schottky	SP6	1.7 kV	Single Phase	-40 C	175 °C	Chassis Mount	1.8 V	200 A	Module
Microchip Technology MSCDC200KK120D1PAG	800 µA	SiC (Silicon Carbide) Schottky	D1P					Chassis Mount	1.8 V		Module	200 A	-40 °C	175 ░C	1.2 kV	1 Pair Common Cathode	No Recovery Time	0 ns
Microchip Technology MSCDC200KK70D1PAG	800 µA	SiC (Silicon Carbide) Schottky	D1P					Chassis Mount	1.8 V		Module	200 A	-40 °C	175 ░C	700 V	1 Pair Common Cathode	No Recovery Time	0 ns
Microchip Technology MSCDC200A170D1PAG	800 µA	SiC (Silicon Carbide) Schottky	D1P					Chassis Mount	1.8 V		Module	200 A	-40 °C	175 ░C	1700 V	1 Pair Series Connection	No Recovery Time	0 ns
Microchip Technology MSCDC200A70D1PAG	800 µA	SiC (Silicon Carbide) Schottky	D1P					Chassis Mount	1.8 V		Module	200 A	-40 °C	175 ░C	700 V	1 Pair Series Connection	No Recovery Time	0 ns
Microchip Technology MSCDC200KK170D1PAG	800 µA	SiC (Silicon Carbide) Schottky	D1P					Chassis Mount	1.8 V		Module	200 A	-40 °C	175 ░C	1700 V	1 Pair Common Cathode	No Recovery Time	0 ns
Microchip Technology MSCDC200A120D1PAG	800 µA	SiC (Silicon Carbide) Schottky	D1P					Chassis Mount	1.8 V		Module	200 A	-40 °C	175 ░C	1.2 kV	1 Pair Series Connection	No Recovery Time	0 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 486.04
Microchip Direct	N/A	1	$ 486.04
		50	$ 402.72
		100	$ 361.07
		250	$ 347.17
		500	$ 305.51
		1000	$ 277.74
		5000	$ 244.41
Newark	Each	1	$ 486.05
		5	$ 333.29
		50	$ 322.18
		100	$ 311.07
		250	$ 311.07
		500	$ 311.07

Description

General part information

MSCDC200KK170D1PAG-Module Series

* SiC Schottky Diode

* Zero reverse recovery

* Zero forward recovery

Documents

Technical documentation and resources

MSCDC200H120AG 1200V Full Bridge SiC Diode Module Datasheet

Data Sheets

Product Change Notice EN

Datasheet