Discrete Semiconductor Products

STU4N52K3

Active

STMicroelectronics

N-CHANNEL 525 V, 2.5 A, 2.1 OHM TYP., SUPERMESH3(TM) POWER MOSFET IN IPAK PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDS7026 +16

Discrete Semiconductor Products

STU4N52K3

Active

STMicroelectronics

N-CHANNEL 525 V, 2.5 A, 2.1 OHM TYP., SUPERMESH3(TM) POWER MOSFET IN IPAK PACKAGE

Deep-Dive with AI

DocumentsDS7026 +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STU4N52K3

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	525 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	334 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	2.6 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STU4N52K3 Series

N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in IPAK package

Part	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Supplier Device Package	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Package / Case
STMicroelectronics STU4N52K3	45 W	MOSFET (Metal Oxide)	2.5 A	150 °C	IPAK	Through Hole	30 V	525 V	334 pF	10 V	11 nC	2.6 Ohm	4.5 V	N-Channel	IPAK TO-251-3 Short Leads TO-251AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.52
		75	$ 0.91
		150	$ 0.75
		525	$ 0.63
		1050	$ 0.57
		2025	$ 0.54
		5025	$ 0.50
		10050	$ 0.49

Description

General part information

STU4N52K3 Series

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.