STU4N52K3 Series
N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in IPAK package
Manufacturer: STMicroelectronics
Catalog
N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in IPAK package
| Part | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Supplier Device Package | Mounting Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | FET Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 45 W | MOSFET (Metal Oxide) | 2.5 A | 150 °C | IPAK | Through Hole | 30 V | 525 V | 334 pF | 10 V | 11 nC | 2.6 Ohm | 4.5 V | N-Channel | IPAK TO-251-3 Short Leads TO-251AA |
Description
AI
These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.