Discrete Semiconductor Products

PMF63UNEX

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MOSFET N-CH 20V 2.2A SOT323

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Discrete Semiconductor Products

Active

MOSFET N-CH 20V 2.2A SOT323

Technical Specifications

Parameters and characteristics for this part

Specification	PMF63UNEX

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.85 nC
Input Capacitance (Ciss) (Max) @ Vds	289 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max)	395 mW
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP PMF63UNEX	65 mOhm	MOSFET (Metal Oxide)	SC-70 SOT-323	8 V	2.2 A	SOT-323	N-Channel	5.85 nC	1.8 V 4.5 V	395 mW	Surface Mount	289 pF	-55 °C	150 °C	1 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 2.2A (Ta) 395mW (Ta) Surface Mount SOT-323

Technical documentation and resources