Specification	PMF63UNEX

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.85 nC
Input Capacitance (Ciss) (Max) @ Vds	289 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-323, SC-70
Power Dissipation (Max)	395 mW
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

PMF63 Series

20 V, N-channel Trench MOSFET

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Vgs (Max) [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Grade	Power Dissipation (Max)	Qualification	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Nexperia USA Inc. PMF63UNEAX	N-Channel	289 pF	2 A	MOSFET (Metal Oxide)	SC-70 SOT-323	8 V	Surface Mount	5.85 nC	Automotive	395 mW	AEC-Q101	SOT-323	150 °C	-55 °C	20 V	1 V	65 mOhm	1.8 V	4.5 V
Nexperia USA Inc. PMF63UNEX	N-Channel	289 pF	2.2 A	MOSFET (Metal Oxide)	SC-70 SOT-323	8 V	Surface Mount	5.85 nC		395 mW		SOT-323	150 °C	-55 °C	20 V	1 V	65 mOhm	1.8 V	4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.30
		10	$ 0.21
		100	$ 0.11
		500	$ 0.10
		1000	$ 0.07
	Digi-Reel®	1	$ 0.30
		10	$ 0.21
		100	$ 0.11
		500	$ 0.10
		1000	$ 0.07
	N/A	286764	$ 0.56
	Tape & Reel (TR)	3000	$ 0.07
		6000	$ 0.07

Description

General part information

PMF63 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.