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SOT-323
Discrete Semiconductor Products

PMF63UNEAX

Active
Nexperia USA Inc.

MOSFET N-CHANNEL 20V 2A SC70

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DocumentsDatasheet
SOT-323
Discrete Semiconductor Products

PMF63UNEAX

Active
Nexperia USA Inc.

MOSFET N-CHANNEL 20V 2A SC70

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPMF63UNEAX
Current - Continuous Drain (Id) @ 25°C2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.85 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds289 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-323, SC-70
Power Dissipation (Max)395 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs65 mOhm
Supplier Device PackageSOT-323
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
2900$ 0.00

Description

General part information

PMF63 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources