Catalog
20 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Technology | Package / Case | Vgs (Max) [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Grade | Power Dissipation (Max) | Qualification | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | N-Channel | 289 pF | 2 A | MOSFET (Metal Oxide) | SC-70 SOT-323 | 8 V | Surface Mount | 5.85 nC | Automotive | 395 mW | AEC-Q101 | SOT-323 | 150 °C | -55 °C | 20 V | 1 V | 65 mOhm | 1.8 V | 4.5 V |
 Nexperia USA Inc. | N-Channel | 289 pF | 2.2 A | MOSFET (Metal Oxide) | SC-70 SOT-323 | 8 V | Surface Mount | 5.85 nC | 395 mW | SOT-323 | 150 °C | -55 °C | 20 V | 1 V | 65 mOhm | 1.8 V | 4.5 V |