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MICROCHIP MIC29150-5.0WU
Discrete Semiconductor Products

STB8NM60T4

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 650 V, 8 A, 0.9 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet ENProduct Change Notice EN+19
MICROCHIP MIC29150-5.0WU
Discrete Semiconductor Products

STB8NM60T4

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 650 V, 8 A, 0.9 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsTechnical Data Sheet ENProduct Change Notice EN+19

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB8NM60T4
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]18 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)100 W
Rds On (Max) @ Id, Vgs1 Ohm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.87
NewarkEach (Supplied on Cut Tape) 1$ 1.93
10$ 1.93
25$ 1.93
50$ 1.93
100$ 1.92
250$ 1.92
500$ 1.92
1000$ 1.92

Description

General part information

STB8NM60T4 Series

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance that is superior to similar products on the market.