STB8NM60T4 Series

N-channel 600 V, 0.9 Ohm typ., 8 A MDmesh Power MOSFET in a D2PAK package

Catalog

N-channel 600 V, 0.9 Ohm typ., 8 A MDmesh Power MOSFET in a D2PAK package

Part	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Technology
STMicroelectronics STB8NM60T4	D2PAK	Surface Mount	1 Ohm	30 V	N-Channel	8 A	400 pF	5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	18 nC	10 V	100 W	150 °C	-55 °C	MOSFET (Metal Oxide)

Catalog

N-channel 600 V, 0.9 Ohm typ., 8 A MDmesh Power MOSFET in a D2PAK package

Description

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance that is superior to similar products on the market.