
STD18N55M5
ActiveMOSFET TRANSISTOR, N CHANNEL, 13 A, 550 V, 0.18 OHM, 10 V, 4 V ROHS COMPLIANT: YES

STD18N55M5
ActiveMOSFET TRANSISTOR, N CHANNEL, 13 A, 550 V, 0.18 OHM, 10 V, 4 V ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | STD18N55M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16 A |
| Drain to Source Voltage (Vdss) | 550 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) [Max] | 110 W |
| Rds On (Max) @ Id, Vgs | 192 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD18N55M5 Series
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Documents
Technical documentation and resources