Discrete Semiconductor Products

STD1805-1

Obsolete

STMicroelectronics

TRANS NPN 60V 5A IPAK

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DocumentsDatasheet

Discrete Semiconductor Products

STD1805-1

Obsolete

STMicroelectronics

TRANS NPN 60V 5A IPAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD1805-1

Current - Collector (Ic) (Max) [Max]	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power - Max [Max]	15 W
Supplier Device Package	IPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

STD18 Series

N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a DPAK package

Part	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Package / Case	Power - Max [Max]	Transistor Type	Operating Temperature	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics STD1805-1	IPAK	60 V	600 mV	200	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	15 W	NPN	150 °C	150 MHz	5 A	100 nA
STMicroelectronics STD18N55M5	DPAK				Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3			150 °C				25 V	192 mOhm	110 W	550 V	10 V	MOSFET (Metal Oxide)	31 nC	5 V	N-Channel	16 A	1260 pF
STMicroelectronics STD18N60M6	TO-252 (DPAK)				Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3							25 V	280 mOhm	110 W	600 V	10 V	MOSFET (Metal Oxide)		4.75 V	N-Channel	13 A	650 pF	16.8 nC	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

STD18 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources