Specification	2N6274

Current - Collector (Ic) (Max)	50 A
Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Mounting Type	Through Hole
Package / Case	TO-3, TO-204AA
Power - Max [Max]	250 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

JANTX2N6274-Transistor Series

NPN Silicon Power 150V, 50A

Part	Transistor Type	Qualification	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max)	Grade	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case
Microchip Technology JANTX2N6274	NPN	MIL-PRF-19500/514	Through Hole	100 V	50 µA	30	50 A	Military	250 W	3 V
Microchip Technology 2N6274	NPN		Through Hole	100 V	50 µA	50	50 A		250 W	3 V	TO-204AA TO-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 90.01
Microchip Direct	N/A	1	$ 96.94
Newark	Each	100	$ 90.01
		500	$ 86.55

Description

General part information

JANTX2N6274-Transistor Series

This specification covers the performance requirements for NPN silicon, power, 2N6274 and 2N6277 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/514. The device package outlines are as follows: TO-3 for all device types.

Documents

Technical documentation and resources

2N6274 and 2N6277

Data Sheets

Product Change Notice EN

Datasheet