Deep-Dive with AI
Search across all available documentation for this part.
Documents2N6274 and 2N6277
Deep-Dive with AI
Documents2N6274 and 2N6277
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTX2N6274 |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 30 |
| Grade | Military |
| Mounting Type | Through Hole |
| Power - Max [Max] | 250 W |
| Qualification | MIL-PRF-19500/514 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 1250.00 | |
| Microchip Direct | N/A | 1 | $ 227.00 | |
Description
General part information
JANTX2N6274-Transistor Series
This specification covers the performance requirements for NPN silicon, power, 2N6274 and 2N6277 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/514. The device package outlines are as follows: TO-3 for all device types.
Documents
Technical documentation and resources
