Specification	APTDF200H60G

Current - Average Rectified (Io)	270 A
Current - Reverse Leakage @ Vr	350 µA
Diode Type	Single Phase
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	SP6
Supplier Device Package	SP6
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	2 V
Voltage - Peak Reverse (Max) [Max]	600 V

APTDF200H120G-Module Series

1200V/Full bridge/Si Diode modules

Part	Technology	Voltage - Forward (Vf) (Max) @ If	Diode Type	Supplier Device Package	Package / Case	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Peak Reverse (Max) [Max]
Microchip Technology APTDF200H120G	Standard	3 V	Single Phase	SP6	SP6	235 A	Chassis Mount	150 µA	-40 C	175 °C	1.2 kV
Microchip Technology APTDF200H60G	Standard	2 V	Single Phase	SP6	SP6	270 A	Chassis Mount	350 µA	-40 C	175 °C	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* FRED Si diode

* Ultra fast recovery times

* Soft recovery characteristics

Technical documentation and resources