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Discrete Semiconductor Products

APTDF200H120G

Active
Microchip Technology

1200V/FULL BRIDGE/SI DIODE MODULES

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Discrete Semiconductor Products

APTDF200H120G

Active
Microchip Technology

1200V/FULL BRIDGE/SI DIODE MODULES

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTDF200H120G
Current - Average Rectified (Io)235 A
Current - Reverse Leakage @ Vr150 µA
Diode TypeSingle Phase
Mounting TypeChassis Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseSP6
Supplier Device PackageSP6
TechnologyStandard
Voltage - Forward (Vf) (Max) @ If3 V
Voltage - Peak Reverse (Max) [Max]1.2 kV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 9$ 145.51
100$ 103.94
Microchip DirectN/A 1$ 145.51
50$ 120.57
100$ 108.10
250$ 103.94
500$ 91.47
1000$ 83.15
5000$ 73.17

Description

General part information

APTDF200H120G-Module Series

* FRED Si diode

* Ultra fast recovery times

* Soft recovery characteristics