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TOSHIBA 2SA1943N(S1,E,S)
Discrete Semiconductor Products

GT50JR22(STA1,E,S)

Active
Toshiba Semiconductor and Storage

IGBT, 50 A, 1.55 V, 230 W, 600 V, TO-3PN, 3 PINS

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet ENIGBT for Voltage-Resonant Inverters: GTN20N135SRA+1
TOSHIBA 2SA1943N(S1,E,S)
Discrete Semiconductor Products

GT50JR22(STA1,E,S)

Active
Toshiba Semiconductor and Storage

IGBT, 50 A, 1.55 V, 230 W, 600 V, TO-3PN, 3 PINS

Deep-Dive with AI

DocumentsTechnical Data Sheet ENIGBT for Voltage-Resonant Inverters: GTN20N135SRA+1

Technical Specifications

Parameters and characteristics for this part

SpecificationGT50JR22(STA1,E,S)
Current - Collector (Ic) (Max) [Max]50 A
Current - Collector Pulsed (Icm)100 A
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseSC-65-3, TO-3P-3
Power - Max [Max]230 W
Supplier Device PackageTO-3P(N)
Vce(on) (Max) @ Vge, Ic2.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 14$ 6.54
Tube 1$ 5.59
10$ 3.74
100$ 2.68
500$ 2.23
1000$ 2.19
MouserN/A 1$ 6.54
25$ 4.61
100$ 3.83
250$ 3.11
500$ 2.73
NewarkEach 1$ 6.65
10$ 6.55
25$ 4.49
50$ 4.42
100$ 3.89
250$ 3.87
500$ 3.45

Description

General part information

GT50JR22 Series

IGBT 600 V 50 A 230 W Through Hole TO-3P(N)