/ 0
100%
GT50JR22(STA1,E,S)Active
Toshiba Semiconductor and Storage
IGBT, 50 A, 1.55 V, 230 W, 600 V, TO-3PN, 3 PINS
Ask questions about this document, request analysis, or get help understanding technical specifications.
Technical Data Sheet EN
IGBT for Voltage-Resonant Inverters: GTN20N135SRA