GT50JR22 Series

Catalog

IGBT, 50 A, 1.55 V, 230 W, 600 V, TO-3PN, 3 PINS

Part	Current - Collector Pulsed (Icm)	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type
Toshiba Semiconductor and Storage GT50JR22(STA1,E,S)	100 A	230 W	2.2 V	SC-65-3 TO-3P-3	TO-3P(N)	50 A	175 °C	600 V	Through Hole