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Discrete Semiconductor Products

MSC360SMA120SDT/R

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Microchip Technology

1200V, 360 MOHM, DISCRETE MSIC™ MOSFET

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TO-263 / 7
Discrete Semiconductor Products

MSC360SMA120SDT/R

Active
Microchip Technology

1200V, 360 MOHM, DISCRETE MSIC™ MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationMSC360SMA120SDT/R
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)20 V, 18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]21 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]258 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max) [Max]92 W
Rds On (Max) @ Id, Vgs450 mOhm
Supplier Device PackageTO-263-7
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]23 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.80
25$ 6.27
100$ 5.46
Digi-Reel® 1$ 6.80
25$ 6.27
100$ 5.46
Tape & Reel (TR) 800$ 5.46
Microchip DirectT/R 1$ 4.98
10$ 4.59
100$ 4.00
500$ 3.73

Description

General part information

MSC360SMA120 Series

MSC360SMA120 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.