MSC360SMA120 Series

1200V, 360 mOhm, Discrete mSiC™ MOSFET

Catalog

1200V, 360 mOhm, Discrete mSiC™ MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology
Microchip Technology MSC360SMA120B	-55 °C	175 ░C	11 A	TO-247-3	78 W	450 mOhm	TO-247-3	3.14 V 500 µA	21 nC	Through Hole	23 V	-10 V	N-Channel	255 pF	1200 V
Microchip Technology MSC360SMA120SA	-55 °C	175 ░C	11 A		71 W	450 mOhm		3.14 V	21 nC		23 V	-10 V	N-Channel	255 pF	1200 V
Microchip Technology MSC360SMA120SDT/R	-55 °C	175 ░C	12 A	TO-263-7		450 mOhm	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	5 V	21 nC	Surface Mount	23 V	-10 V	N-Channel	258 pF	1200 V	92 W	18 V 20 V	SiC (Silicon Carbide Junction Transistor)

Catalog

1200V, 360 mOhm, Discrete mSiC™ MOSFET

Key Features

- Low capacitances and low gate charge

- Fast switching speed due to low internal gage resistance (ESR)

- Stable operation at high junction temperature, TJ(max) = 175°C

- Fast and reliable body diode

- Superior avalanche ruggedness

- RoHS Compliant

Description

MSC360SMA120 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.