Discrete Semiconductor Products

FCH041N60F

NRND

ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET® II, FRFET®, 600 V, 76 A, 41 MΩ, TO-247

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Search across all available documentation for this part.

DocumentsDatasheet Technical Data Sheet EN +2

Discrete Semiconductor Products

FCH041N60F

NRND

ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET® II, FRFET®, 600 V, 76 A, 41 MΩ, TO-247

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN +2

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FCH041N60F

Current - Continuous Drain (Id) @ 25°C	76 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	360 nC
Input Capacitance (Ciss) (Max) @ Vds	14365 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	595 W
Rds On (Max) @ Id, Vgs	41 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

FCH041N60F_F085 Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 76 A, 41 mΩ, TO-247

Part	Technology	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FCH041N60F	MOSFET (Metal Oxide)	41 mOhm	N-Channel	Through Hole	600 V	TO-247-3	5 V	-55 °C	150 °C	14365 pF	10 V	360 nC	595 W	76 A	20 V	TO-247-3
ON Semiconductor FCH041N60F-F085	MOSFET (Metal Oxide)	41 mOhm	N-Channel	Through Hole	600 V	TO-247-3	5 V	-55 °C	150 °C	10900 pF	10 V		595 W	76 A	20 V	TO-247-3	AEC-Q101	Automotive	347 nC
ON Semiconductor FCH041N65F-F155	MOSFET (Metal Oxide)	41 mOhm	N-Channel	Through Hole	650 V	TO-247-3		-55 °C	150 °C		10 V	294 nC	595 W	76 A	20 V	TO-247-3				13020 pF
ON Semiconductor FCH041N60E	MOSFET (Metal Oxide)		N-Channel	Through Hole	600 V	TO-247-3	3.5 V	-55 °C	150 °C		10 V		592 W	77 A	20 V	TO-247-3			380 nC	13700 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 14.14
		10	$ 9.94
		100	$ 7.56
		500	$ 7.46
Newark	Each	1	$ 14.18
		10	$ 13.28
		25	$ 12.00
		50	$ 10.71
ON Semiconductor	N/A	1	$ 5.02

Description

General part information

FCH041N60F_F085 Series

SuperFET®II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Documents

Technical documentation and resources

Datasheet

Technical Data Sheet EN

Datasheet

Package Drawing-340CK-TO-247-3LD SHORT LEAD

Package Drawing