Specification	FCH041N60E

Current - Continuous Drain (Id) @ 25°C	77 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	380 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	13700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	592 W
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

FCH041N60F_F085 Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 76 A, 41 mΩ, TO-247

Part	Technology	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FCH041N60F	MOSFET (Metal Oxide)	41 mOhm	N-Channel	Through Hole	600 V	TO-247-3	5 V	-55 °C	150 °C	14365 pF	10 V	360 nC	595 W	76 A	20 V	TO-247-3
ON Semiconductor FCH041N60F-F085	MOSFET (Metal Oxide)	41 mOhm	N-Channel	Through Hole	600 V	TO-247-3	5 V	-55 °C	150 °C	10900 pF	10 V		595 W	76 A	20 V	TO-247-3	AEC-Q101	Automotive	347 nC
ON Semiconductor FCH041N65F-F155	MOSFET (Metal Oxide)	41 mOhm	N-Channel	Through Hole	650 V	TO-247-3		-55 °C	150 °C		10 V	294 nC	595 W	76 A	20 V	TO-247-3				13020 pF
ON Semiconductor FCH041N60E	MOSFET (Metal Oxide)		N-Channel	Through Hole	600 V	TO-247-3	3.5 V	-55 °C	150 °C		10 V		592 W	77 A	20 V	TO-247-3			380 nC	13700 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 14.14
		10	$ 9.94
		100	$ 7.56
		500	$ 7.46
LCSC	Piece	1	$ 18.81
		200	$ 7.28
		450	$ 7.02
		900	$ 6.90
Newark	Each	250	$ 8.36
		500	$ 8.12
ON Semiconductor	N/A	1	$ 6.86

Description

General part information

FCH041N60F_F085 Series

SuperFET®II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.