FCH041N60F_F085 Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 76 A, 41 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 76 A, 41 mΩ, TO-247

Part	Technology	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FCH041N60F	MOSFET (Metal Oxide)	41 mOhm	N-Channel	Through Hole	600 V	TO-247-3	5 V	-55 °C	150 °C	14365 pF	10 V	360 nC	595 W	76 A	20 V	TO-247-3
ON Semiconductor FCH041N60F-F085	MOSFET (Metal Oxide)	41 mOhm	N-Channel	Through Hole	600 V	TO-247-3	5 V	-55 °C	150 °C	10900 pF	10 V		595 W	76 A	20 V	TO-247-3	AEC-Q101	Automotive	347 nC
ON Semiconductor FCH041N65F-F155	MOSFET (Metal Oxide)	41 mOhm	N-Channel	Through Hole	650 V	TO-247-3		-55 °C	150 °C		10 V	294 nC	595 W	76 A	20 V	TO-247-3				13020 pF
ON Semiconductor FCH041N60E	MOSFET (Metal Oxide)		N-Channel	Through Hole	600 V	TO-247-3	3.5 V	-55 °C	150 °C		10 V		592 W	77 A	20 V	TO-247-3			380 nC	13700 pF

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 76 A, 41 mΩ, TO-247

Key Features

• Typical RDS(on)= 36 mΩ at VGS= 10 V, ID= 38 A

• Typical Qg(tot)= 267 nC at VGS= 10V, ID= 38 A

• Low Effective Output Capacitance (Typical Coss(eff.)= 720 nF)

• 100% Avalanche Tested

• Qualified to AEC Q101

• RoHS Compliant

Description

SuperFET®II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.