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2N2907AUB
Discrete Semiconductor Products

2N2222AUA/TR

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Microchip Technology

TRANSISTOR GP BJT NPN 50V 800MA 4-PIN SMD T/R

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2N2907AUB
Discrete Semiconductor Products

2N2222AUA/TR

Active
Microchip Technology

TRANSISTOR GP BJT NPN 50V 800MA 4-PIN SMD T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N2222AUA/TR
Current - Collector (Ic) (Max) [Max]800 mA
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Mounting TypeSurface Mount
Package / Case4-SMD
Power - Max [Max]650 mW
Supplier Device Package4-SMD
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 25.34
Microchip DirectN/A 1$ 27.29
100$ 25.34
500$ 24.36
1000$ 23.00
NewarkEach 100$ 25.34
500$ 24.36

Description

General part information

JANTX2N2222AUA-Transistor Series

This specification covers the performance requirements for NPN, silicon, switching 2N2221 and 2N2222 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/255 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.The device packages for the encapsulated device types are as follows: 2N2221A and 2N2222A (TO-18, UA, UB, UBC, UBN, and UBCN). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/255

Documents

Technical documentation and resources