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Discrete Semiconductor Products

JANSF2N2222AUA

Active
Microchip Technology

TRANS GP BJT NPN 50V 0.8A 650MW 4-PIN UA WAFFLE

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Discrete Semiconductor Products

JANSF2N2222AUA

Active
Microchip Technology

TRANS GP BJT NPN 50V 0.8A 650MW 4-PIN UA WAFFLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANSF2N2222AUA
Current - Collector (Ic) (Max) [Max]800 mA
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
GradeMilitary
Mounting TypeSurface Mount
Package / Case4-SMD, No Lead
Power - Max [Max]650 mW
QualificationMIL-PRF-19500/255
Supplier Device PackageUA
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 50$ 156.77

Description

General part information

JANTX2N2222AUA-Transistor Series

This specification covers the performance requirements for NPN, silicon, switching 2N2221 and 2N2222 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/255 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.The device packages for the encapsulated device types are as follows: 2N2221A and 2N2222A (TO-18, UA, UB, UBC, UBN, and UBCN). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/255

Documents

Technical documentation and resources

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