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Power33
Discrete Semiconductor Products

FDMC8360L

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 40 V, 80 A, 0.0016 OHM, POWER 33, SURFACE MOUNT

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Power33
Discrete Semiconductor Products

FDMC8360L

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 40 V, 80 A, 0.0016 OHM, POWER 33, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC8360L
Current - Continuous Drain (Id) @ 25°C27 A, 80 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs80 nC
Input Capacitance (Ciss) (Max) @ Vds5795 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)2.3 W, 54 W
Rds On (Max) @ Id, Vgs2.1 mOhm
Supplier Device PackagePower33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 3000$ 1.53
6000$ 1.33
DigikeyCut Tape (CT) 1$ 2.80
10$ 1.82
100$ 1.25
500$ 1.01
1000$ 0.93
Digi-Reel® 1$ 2.80
10$ 1.82
100$ 1.25
500$ 1.01
1000$ 0.93
Tape & Reel (TR) 3000$ 0.86
NewarkEach (Supplied on Cut Tape) 1$ 2.38
10$ 1.63
25$ 1.48
50$ 1.32
ON SemiconductorN/A 1$ 0.55

Description

General part information

FDMC8360LET40 Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.