Specification	FDMC8360LET40

Current - Continuous Drain (Id) @ 25°C	27 A, 141 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	5300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	75 W, 2.8 W
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	Power33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMC8360LET40 Series

N-Channel Shielded Gate Power Trench® MOSFET 40V, 141A, 2.1mΩ

Part	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
ON Semiconductor FDMC8360LET40	N-Channel	2.1 mOhm	Power33	3 V	27 A 141 A	4.5 V 10 V	20 V	Surface Mount	80 nC	40 V	5300 pF	2.8 W 75 W	MOSFET (Metal Oxide)	-55 °C	175 ░C	8-PowerWDFN
ON Semiconductor FDMC8360L	N-Channel	2.1 mOhm	Power33	3 V	27 A 80 A	4.5 V 10 V	20 V	Surface Mount	80 nC	40 V	5795 pF	2.3 W 54 W	MOSFET (Metal Oxide)	-55 °C	150 °C	8-PowerWDFN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.71
		10	$ 1.75
		100	$ 1.21
		500	$ 0.97
		1000	$ 0.90
	Digi-Reel®	1	$ 2.71
		10	$ 1.75
		100	$ 1.21
		500	$ 0.97
		1000	$ 0.90
	Tape & Reel (TR)	3000	$ 0.83
Newark	Each	2500	$ 0.89
		5000	$ 0.86
ON Semiconductor	N/A	1	$ 0.55

Description

General part information

FDMC8360LET40 Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.