Discrete Semiconductor Products

PBRN123EK,115

Obsolete

TRANS PREBIAS NPN 40V 0.6A SMT3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PREBIAS NPN 40V 0.6A SMT3

Technical Specifications

Parameters and characteristics for this part

Specification	PBRN123EK,115

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	280
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	2.2 kOhms
Supplier Device Package	MPAK, SMT3
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic [Max]	1.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Power - Max [Max]	Resistor - Base (R1)	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Resistor - Emitter Base (R2)	Vce Saturation (Max) @ Ib, Ic [Max]
Freescale Semiconductor - NXP PBRN123YK,115	40 V	SC-59 SOT-23-3 TO-236-3	250 mW	2.2 kOhm	NPN - Pre-Biased	500	500 nA	Surface Mount	600 mA	MPAK SMT3	10 kOhms	1.15 V
Freescale Semiconductor - NXP PBRN123ES,126	40 V	TO-226-3 TO-92-3	700 mW	2.2 kOhm	NPN - Pre-Biased	280	500 nA	Through Hole	800 mA	TO-92-3	2.2 kOhms	1.15 V
Freescale Semiconductor - NXP PBRN123EK,115	40 V	SC-59 SOT-23-3 TO-236-3	250 mW	2.2 kOhm	NPN - Pre-Biased	280	500 nA	Surface Mount	600 mA	MPAK SMT3	2.2 kOhms	1.15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 600 mA 250 mW Surface Mount SMT3; MPAK

Technical documentation and resources