Discrete Semiconductor Products

PBRN123ES,126

Obsolete

TRANS PREBIAS NPN 40V TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PREBIAS NPN 40V TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	PBRN123ES,126

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	280
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	700 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	2.2 kOhms
Supplier Device Package	TO-92-3
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic [Max]	1.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Power - Max [Max]	Resistor - Base (R1)	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Resistor - Emitter Base (R2)	Vce Saturation (Max) @ Ib, Ic [Max]
Freescale Semiconductor - NXP PBRN123YK,115	40 V	SC-59 SOT-23-3 TO-236-3	250 mW	2.2 kOhm	NPN - Pre-Biased	500	500 nA	Surface Mount	600 mA	MPAK SMT3	10 kOhms	1.15 V
Freescale Semiconductor - NXP PBRN123ES,126	40 V	TO-226-3 TO-92-3	700 mW	2.2 kOhm	NPN - Pre-Biased	280	500 nA	Through Hole	800 mA	TO-92-3	2.2 kOhms	1.15 V
Freescale Semiconductor - NXP PBRN123EK,115	40 V	SC-59 SOT-23-3 TO-236-3	250 mW	2.2 kOhm	NPN - Pre-Biased	280	500 nA	Surface Mount	600 mA	MPAK SMT3	2.2 kOhms	1.15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 800 mA 700 mW Through Hole TO-92-3

Technical documentation and resources