Discrete Semiconductor Products

PBRN123ES,126

Obsolete

TRANS PREBIAS NPN 40V TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PREBIAS NPN 40V TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	PBRN123ES,126

Current - Collector (Ic) (Max)	800 mA
Current - Collector Cutoff (Max)	500 nA
DC Current Gain (hFE) (Min)	280
Mounting Type	Through Hole
Package / Case	TO-92-3 (TO-226AA) Formed Leads, TO-226-3
Package Name	TO-92-3
Power - Max	700 mW
Resistor - Base (R1) Resistance	2.2 kOhm
Resistor - Emitter Base (R2)	2.2 kOhms
Transistor Type	Pre-Biased, NPN
Vce Saturation (Max)	1.15 V
Voltage - Collector Emitter Breakdown (Max)	40 V

Part	DC Current Gain (hFE) (Min)	Transistor Type	Current - Collector Cutoff (Max)	Power - Max	Mounting Type	Current - Collector (Ic) (Max)	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Resistor - Emitter Base (R2)	Vce Saturation (Max)	Package Name	Resistor - Base (R1) Resistance
NXP USA Inc. PBRN123YK,115	500	NPN Pre-Biased	500 nA	250 mW	Surface Mount	0.6 mA	SC-59 SOT-23-3 TO-236-3	40 V	10 kOhms	1.15 V	SMT3; MPAK	2.2 kOhm
NXP USA Inc. PBRN123ES,126	280	NPN Pre-Biased	500 nA	700 mW	Through Hole	800 mA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	40 V	2.2 kOhms	1.15 V	TO-92-3	2.2 kOhm
NXP USA Inc. PBRN123EK,115	280	NPN Pre-Biased	500 nA	250 mW	Surface Mount	0.6 mA	SC-59 SOT-23-3 TO-236-3	40 V	2.2 kOhms	1.15 V	SMT3; MPAK	2.2 kOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 800 mA 700 mW Through Hole TO-92-3

Technical documentation and resources