
Discrete Semiconductor Products
PBRN123YK,115
ObsoleteFreescale Semiconductor - NXP
TRANS PREBIAS NPN 40V 0.6A SMT3
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

Discrete Semiconductor Products
PBRN123YK,115
ObsoleteFreescale Semiconductor - NXP
TRANS PREBIAS NPN 40V 0.6A SMT3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | PBRN123YK,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 600 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 500 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 250 mW |
| Resistor - Base (R1) | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Supplier Device Package | MPAK, SMT3 |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic [Max] | 1.15 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
PBRN123 Series
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 600 mA 250 mW Surface Mount SMT3; MPAK
Documents
Technical documentation and resources