
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | PBRN123YK,115 |
|---|---|
| Current - Collector (Ic) (Max) | 0.6 mA |
| Current - Collector Cutoff (Max) | 500 nA |
| DC Current Gain (hFE) (Min) | 500 |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SMT3; MPAK |
| Power - Max | 250 mW |
| Resistor - Base (R1) Resistance | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Transistor Type | Pre-Biased, NPN |
| Vce Saturation (Max) | 1.15 V |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
CAD
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Description
General part information
PBRN123 Series
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 600 mA 250 mW Surface Mount SMT3; MPAK
Documents
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