A2U8M12W3-FC
ActiveACEPACK 2 POWER MODULE, 3-LEVEL TOPOLOGY, BASED ON SILICON CARBIDE POWER MOSFETS 750 AND 1200 V, 100 A
Deep-Dive with AI
Search across all available documentation for this part.
A2U8M12W3-FC
ActiveACEPACK 2 POWER MODULE, 3-LEVEL TOPOLOGY, BASED ON SILICON CARBIDE POWER MOSFETS 750 AND 1200 V, 100 A
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | A2U8M12W3-FC |
|---|---|
| Configuration | 4 N-Channel (Three Level Inverter) |
| Current - Continuous Drain (Id) @ 25°C | 180 A, 140 A |
| Drain to Source Voltage (Vdss) | 750 V, 1.2 kV |
| Gate Charge (Qg) (Max) @ Vgs | 288 nC, 304 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7660 pF, 7370 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | Module |
| Rds On (Max) @ Id, Vgs [Max] | 12.5 mOhm |
| Rds On (Max) @ Id, Vgs [Min] | 8 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4 V, 4.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
A2U8M12W3-FC Series
This power module realizes a 3-level topology in an ACEPACK 2 module with NTC and capacitance, integrating the latest advances in silicon carbide MOSFETs from STMicroelectronics, represented by third generation technology. This modular solution is used to realize complex topologies with very high power density and efficiency requirements.
Documents
Technical documentation and resources