A2U8M12W3-FC Series

ACEPACK 2 power module, 3-level topology, based on silicon carbide Power MOSFETs 750 and 1200 V, 100 A

Catalog

ACEPACK 2 power module, 3-level topology, based on silicon carbide Power MOSFETs 750 and 1200 V, 100 A

Part	Vgs(th) (Max) @ Id	Configuration	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Min]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics A2U8M12W3-FC	4 V 4.2 V	4 N-Channel (Three Level Inverter)	Module	140 A 180 A	8 mOhm	12.5 mOhm	1.2 kV 750 V	7370 pF 7660 pF	Chassis Mount	Silicon Carbide (SiC)	288 nC 304 nC	150 °C	-55 °C

Catalog

ACEPACK 2 power module, 3-level topology, based on silicon carbide Power MOSFETs 750 and 1200 V, 100 A

Description

This power module realizes a 3-level topology in an ACEPACK 2 module with NTC and capacitance, integrating the latest advances in silicon carbide MOSFETs from STMicroelectronics, represented by third generation technology. This modular solution is used to realize complex topologies with very high power density and efficiency requirements.