FDMA1028NZ
ActiveDUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 20V, 3.7A, 68MΩ
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FDMA1028NZ
ActiveDUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 20V, 3.7A, 68MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMA1028NZ |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 3.7 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-VDFN Exposed Pad |
| Power - Max [Max] | 700 mW |
| Rds On (Max) @ Id, Vgs | 68 mOhm |
| Supplier Device Package | 6-MicroFET (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 654 | $ 0.46 | |
| 654 | $ 0.46 | |||
| Cut Tape (CT) | 1 | $ 0.92 | ||
| 1 | $ 0.92 | |||
| 10 | $ 0.75 | |||
| 10 | $ 0.75 | |||
| 100 | $ 0.58 | |||
| 100 | $ 0.58 | |||
| 500 | $ 0.49 | |||
| 500 | $ 0.49 | |||
| 1000 | $ 0.40 | |||
| 1000 | $ 0.40 | |||
| Digi-Reel® | 1 | $ 0.92 | ||
| 1 | $ 0.92 | |||
| 10 | $ 0.75 | |||
| 10 | $ 0.75 | |||
| 100 | $ 0.58 | |||
| 100 | $ 0.58 | |||
| 500 | $ 0.49 | |||
| 500 | $ 0.49 | |||
| 1000 | $ 0.40 | |||
| 1000 | $ 0.40 | |||
| Tape & Reel (TR) | 3000 | $ 0.38 | ||
| 3000 | $ 0.38 | |||
| 6000 | $ 0.36 | |||
| 6000 | $ 0.36 | |||
| 9000 | $ 0.34 | |||
| 9000 | $ 0.34 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.46 | |
| 6000 | $ 0.43 | |||
| 12000 | $ 0.40 | |||
| 18000 | $ 0.37 | |||
| 30000 | $ 0.35 | |||
| ON Semiconductor | N/A | 1 | $ 0.17 | |
Description
General part information
FDMA1028NZ Series
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Documents
Technical documentation and resources