Specification	FDMA1028NZ-F021

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.7 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VDFN Exposed Pad
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs	68 mOhm
Supplier Device Package	6-MicroFET (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

FDMA1028NZ Series

Dual N-Channel PowerTrench® MOSFET 20V, 3.7A, 68mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power - Max [Max]	Supplier Device Package	FET Feature	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Configuration	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDMA1028NZ-F021	6 nC	6-VDFN Exposed Pad	20 V	340 pF	MOSFET (Metal Oxide)	700 mW	6-MicroFET (2x2)	Logic Level Gate	68 mOhm	1.5 V	2 N-Channel (Dual)	3.7 A	Surface Mount	-55 °C	150 °C
ON Semiconductor FDMA1028NZ	6 nC	6-VDFN Exposed Pad	20 V	340 pF	MOSFET (Metal Oxide)	700 mW	6-MicroFET (2x2)	Logic Level Gate	68 mOhm	1.5 V	2 N-Channel (Dual)	3.7 A	Surface Mount	-55 °C	150 °C
ON Semiconductor FDMA1028NZ	6 nC	6-VDFN Exposed Pad	20 V	340 pF	MOSFET (Metal Oxide)	700 mW	6-MicroFET (2x2)	Logic Level Gate	68 mOhm	1.5 V	2 N-Channel (Dual)	3.7 A	Surface Mount	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.68
		10	$ 0.59
		100	$ 0.41
		500	$ 0.34
		1000	$ 0.29
	Digi-Reel®	1	$ 0.68
		10	$ 0.59
		100	$ 0.41
		500	$ 0.34
		1000	$ 0.29
	Tape & Reel (TR)	3000	$ 0.26
		6000	$ 0.24
		9000	$ 0.23
		30000	$ 0.22

Description

General part information

FDMA1028NZ Series

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.