Specification	HGTG20N60B3D

Current - Collector (Ic) (Max) [Max]	40 A
Gate Charge	80 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	165 W
Reverse Recovery Time (trr)	55 ns
Supplier Device Package	TO-247-3
Switching Energy	1.05 mJ, 475 µJ
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

HGTG20N60B3D Series

600V, PT IGBT

Part	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	Switching Energy	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Mounting Type	Supplier Device Package	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)
ON Semiconductor HGTG20N60B3D	55 ns	600 V	80 nC	1.05 mJ 475 µJ	2 V	165 W	40 A	150 °C	-40 °C	TO-247-3	Through Hole	TO-247-3
ON Semiconductor HGTG20N60C3D	55 ns	600 V		500 µJ 500 µJ	1.8 V	164 W	45 A	150 °C	-55 °C	TO-247-3	Through Hole	TO-247-3	10 Ohm 15 V 20 A 480 V	151 ns	28 ns	300 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 4.56
		10	$ 4.28
		25	$ 4.09

Description

General part information

HGTG20N60B3D Series

The HGTG20N60B3D is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.