HGTG20N60B3D Series

600V, PT IGBT

Catalog

600V, PT IGBT

Part	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	Switching Energy	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Mounting Type	Supplier Device Package	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)
ON Semiconductor HGTG20N60B3D	55 ns	600 V	80 nC	1.05 mJ 475 µJ	2 V	165 W	40 A	150 °C	-40 °C	TO-247-3	Through Hole	TO-247-3
ON Semiconductor HGTG20N60C3D	55 ns	600 V		500 µJ 500 µJ	1.8 V	164 W	45 A	150 °C	-55 °C	TO-247-3	Through Hole	TO-247-3	10 Ohm 15 V 20 A 480 V	151 ns	28 ns	300 A

Catalog

600V, PT IGBT

Key Features

• 40A, 600V at TC= 25°C

• Typical Fall Time: 140ns at 150°C

• Short Circuit Rated

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Description

The HGTG20N60B3D is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.