Discrete Semiconductor Products

HGTG20N60C3D

Obsolete

ON Semiconductor

IGBT 600V 45A 164W TO247

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Discrete Semiconductor Products

HGTG20N60C3D

Obsolete

ON Semiconductor

IGBT 600V 45A 164W TO247

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HGTG20N60C3D

Current - Collector (Ic) (Max) [Max]	45 A
Current - Collector Pulsed (Icm)	300 A
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	164 W
Reverse Recovery Time (trr)	55 ns
Supplier Device Package	TO-247-3
Switching Energy	500 µJ, 500 µJ
Td (on/off) @ 25°C	151 ns
Td (on/off) @ 25°C	28 ns
Test Condition	480 V, 20 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

HGTG20N60B3D Series

600V, PT IGBT

Part	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	Switching Energy	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Mounting Type	Supplier Device Package	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)
ON Semiconductor HGTG20N60B3D	55 ns	600 V	80 nC	1.05 mJ 475 µJ	2 V	165 W	40 A	150 °C	-40 °C	TO-247-3	Through Hole	TO-247-3
ON Semiconductor HGTG20N60C3D	55 ns	600 V		500 µJ 500 µJ	1.8 V	164 W	45 A	150 °C	-55 °C	TO-247-3	Through Hole	TO-247-3	10 Ohm 15 V 20 A 480 V	151 ns	28 ns	300 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HGTG20N60B3D Series

The HGTG20N60B3D is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Documents

Technical documentation and resources