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TO-220-F
Discrete Semiconductor Products

STF11N65M5

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STMicroelectronics

N-CHANNEL 650 V, 0.43 OHM TYP., 9 A MDMESH M5 POWER MOSFET IN TO-220FP PACKAGE

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TO-220-F
Discrete Semiconductor Products

STF11N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 0.43 OHM TYP., 9 A MDMESH M5 POWER MOSFET IN TO-220FP PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF11N65M5
Current - Continuous Drain (Id) @ 25°C9 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
Input Capacitance (Ciss) (Max) @ Vds644 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)25 W
Rds On (Max) @ Id, Vgs480 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.88
Tube 50$ 1.72
100$ 1.42
250$ 1.38
500$ 1.20
1250$ 1.02
2500$ 0.97
5000$ 0.93

Description

General part information

STF11 Series

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.