Discrete Semiconductor Products

STF11N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 370 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE

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DocumentsProduct Change Notice EN Datasheet

Discrete Semiconductor Products

STF11N60DM2

Active

STMicroelectronics

N-CHANNEL 600 V, 370 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF11N60DM2

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	614 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	420 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STF11 Series

N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP package

Part	FET Type	Technology	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics STF11NM50N	N-Channel	MOSFET (Metal Oxide)	4 V	Through Hole	10 V	547 pF	19 nC	500 V	25 W	TO-220FP	25 V	470 mOhm	150 °C	8.5 A	TO-220-3 Full Pack
STMicroelectronics STF11NM65N	N-Channel	MOSFET (Metal Oxide)	4 V	Through Hole	10 V			650 V	25 W	TO-220FP	25 V	455 mOhm	150 °C	11 A	TO-220-3 Full Pack	800 pF	29 nC
STMicroelectronics STF11N60DM2	N-Channel	MOSFET (Metal Oxide)	5 V	Through Hole	10 V	614 pF		600 V	25 W	TO-220FP	25 V	420 mOhm		10 A	TO-220-3 Full Pack		16.5 nC	150 °C	-55 °C
STMicroelectronics STF11N50M2	N-Channel	MOSFET (Metal Oxide)	4 V	Through Hole	10 V			500 V	25 W	TO-220FP	25 V	530 mOhm		8 A	TO-220-3 Full Pack	395 pF	12 nC	150 °C	-55 °C
STMicroelectronics STF11N60M2-EP	N-Channel	MOSFET (Metal Oxide)	4.75 V	Through Hole	10 V	390 pF		600 V	25 W	TO-220FP	25 V	595 mOhm		7.5 A	TO-220-3 Full Pack		12.4 nC	150 °C	-55 °C
STMicroelectronics STF11N65M5	N-Channel	MOSFET (Metal Oxide)	5 V	Through Hole	10 V		17 nC	650 V	25 W	TO-220FP	25 V	480 mOhm	150 °C	9 A	TO-220-3 Full Pack	644 pF
STMicroelectronics STF11NM80	N-Channel	MOSFET (Metal Oxide)	5 V	Through Hole	10 V		43.6 nC	800 V	35 W	TO-220FP	30 V	400 mOhm		11 A	TO-220-3 Full Pack	1630 pF		150 °C	-65 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	417	$ 2.38
	Tube	1	$ 2.46
		50	$ 0.79
		100	$ 0.79
		500	$ 0.77
		1000	$ 0.77
		2000	$ 0.74
		5000	$ 0.70
Newark	Each	1	$ 2.81
		10	$ 1.57
		100	$ 1.46
		500	$ 1.26
		1000	$ 1.20
		3000	$ 1.14
		5000	$ 1.10

Description

General part information

STF11 Series

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet