Discrete Semiconductor Products
STB28N65M2
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 650 V, 20 A, 0.15 OHM, TO-263 (D2PAK), SURFACE MOUNT
Discrete Semiconductor Products
STB28N65M2
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 650 V, 20 A, 0.15 OHM, TO-263 (D2PAK), SURFACE MOUNT
Technical Specifications
Parameters and characteristics for this part
| Specification | STB28N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 35 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1440 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 170 W |
| Rds On (Max) @ Id, Vgs | 180 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB28 Series
These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources