Discrete Semiconductor Products
STB28N65M2
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 650 V, 20 A, 0.15 OHM, TO-263 (D2PAK), SURFACE MOUNT
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Discrete Semiconductor Products
STB28N65M2
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 650 V, 20 A, 0.15 OHM, TO-263 (D2PAK), SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STB28N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 35 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1440 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 170 W |
| Rds On (Max) @ Id, Vgs | 180 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB28N65M2 Series
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources