Discrete Semiconductor Products

STB28NM60ND

NRND

STMicroelectronics

MOSFET N-CH 600V 23A D2PAK

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Discrete Semiconductor Products

STB28NM60ND

NRND

STMicroelectronics

MOSFET N-CH 600V 23A D2PAK

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB28NM60ND

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2090 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	190 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STB28 Series

N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package

Part	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STB28NM60ND	MOSFET (Metal Oxide)	190 W	23 A	25 V	150 °C	600 V	62.5 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2090 pF	N-Channel	Surface Mount	TO-263 (D2PAK)	150 mOhm	5 V	10 V
STMicroelectronics STB28N60DM2	MOSFET (Metal Oxide)	170 W	21 A	25 V		600 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1500 pF	N-Channel	Surface Mount	TO-263 (D2PAK)	160 mOhm	5 V	10 V	34 nC	150 °C	-55 °C
STMicroelectronics STB28N65M2	MOSFET (Metal Oxide)	170 W	20 A	25 V	150 °C	650 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		N-Channel	Surface Mount	TO-263 (D2PAK)	180 mOhm	4 V	10 V	35 nC			1440 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 8.14
		10	$ 6.98
		100	$ 5.81
		500	$ 5.13
	Digi-Reel®	1	$ 8.14
		10	$ 6.98
		100	$ 5.81
		500	$ 5.13
	N/A	1427	$ 6.98
	Tape & Reel (TR)	1000	$ 4.23

Description

General part information

STB28 Series

These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources