Discrete Semiconductor Products
STQ2LN60K3-AP
ActiveSTMicroelectronics
N-CHANNEL 600 V, 4 OHM TYP., 0.6 A, MDMESH K3 POWER MOSFET IN A TO-92 PACKAGE
Discrete Semiconductor Products
STQ2LN60K3-AP
ActiveSTMicroelectronics
N-CHANNEL 600 V, 4 OHM TYP., 0.6 A, MDMESH K3 POWER MOSFET IN A TO-92 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STQ2LN60K3-AP |
|---|---|
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 235 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) @ Id, Vgs | 4.5 Ohm |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STQ2LN60K3-AP Series
This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Documents
Technical documentation and resources