STQ2LN60K3-AP Series

N-channel 600 V, 4 Ohm typ., 0.6 A, MDmesh K3 Power MOSFET in a TO-92 package

Catalog

N-channel 600 V, 4 Ohm typ., 0.6 A, MDmesh K3 Power MOSFET in a TO-92 package

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	FET Type	Package / Case	Power Dissipation (Max)
STMicroelectronics STQ2LN60K3-AP	12 nC	600 V	MOSFET (Metal Oxide)	Through Hole	4.5 Ohm	10 V	30 V	TO-92-3	150 °C	235 pF	4.5 V	N-Channel	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	2.5 W

Catalog

N-channel 600 V, 4 Ohm typ., 0.6 A, MDmesh K3 Power MOSFET in a TO-92 package

Description

This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.