Integrated Circuits (ICs)

NTGD1100LT1G

Obsolete

ON Semiconductor

DUAL P-CHANNEL SMALL SIGNAL MOSFET WITH LEVEL-SHIFT -8V, -3.3A, 55MΩ

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Integrated Circuits (ICs)

NTGD1100LT1G

Obsolete

ON Semiconductor

DUAL P-CHANNEL SMALL SIGNAL MOSFET WITH LEVEL-SHIFT -8V, -3.3A, 55MΩ

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTGD1100LT1G

Current - Output (Max) [Max]	3.3 A
Interface	On/Off
Mounting Type	Surface Mount
Number of Outputs	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Output Configuration	High Side
Output Type	P-Channel
Package / Case	TSOT-23-6, SOT-23-6 Thin
Ratio - Input:Output [custom]	1:1
Rds On (Typ)	40 mOhm
Supplier Device Package	6-TSOP
Switch Type	General Purpose
Voltage - Load [Max]	8 V
Voltage - Load [Min]	1.8 V

NTGD1100L Series

Dual P-Channel Small Signal MOSFET with Level-Shift -8V, -3.3A, 55mΩ

Part	Voltage - Load [Min]	Voltage - Load [Max]	Switch Type	Interface	Output Configuration	Current - Output (Max) [Max]	Ratio - Input:Output [custom]	Output Type	Rds On (Typ)	Mounting Type	Supplier Device Package	Number of Outputs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
ON Semiconductor NTGD1100LT1	1.8 V	8 V	General Purpose	On/Off	High Side	3.3 A	1:1	P-Channel	40 mOhm	Surface Mount	6-TSOP	1	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6
ON Semiconductor NTGD1100LT1G	1.8 V	8 V	General Purpose	On/Off	High Side	3.3 A	1:1	P-Channel	40 mOhm	Surface Mount	6-TSOP	1	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTGD1100L Series

The NTGD1100L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VINand VON/OFF

Documents

Technical documentation and resources